[I-8-4] Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)

Naotaka Tawara、Hiromasa Ohmi、Yoshikazu Terai、Hiroaki Kakiuchi、Heiji Watanabe、Yasufumi Fujiwara、Kiyoshi Yasutake (1.Department of Precision Science and Technology, Graduate School of Engineering、2.Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2006.I-8-4