Low temperature (300℃) growth of crystalline/non-crystalline thin Si films by a newly developed single shower dual injection system employing microwave excited high density hydrogen plasma and silicon radicals CVD process.

Toru Takeda; Kouji Tanaka; Masaki Saito; Yoshimichi Kato; Toshirou Tsumori; Herzl Aharoni; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2006.I-8-5L

[I-8-5L] Low temperature (300℃) growth of crystalline/non-crystalline thin Si films by a newly developed single shower dual injection system employing microwave excited high density hydrogen plasma and silicon radicals CVD process.

Toru Takeda, Kouji Tanaka, Masaki Saito, Yoshimichi Kato, Toshirou Tsumori, Herzl Aharoni, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

https://doi.org/10.7567/SSDM.2006.I-8-5L

2006 International Conference on Solid State Devices and Materials

[I-8-5L] Low temperature (300℃) growth of crystalline/non-crystalline thin Si films by a newly developed single shower dual injection system employing microwave excited high density hydrogen plasma and silicon radicals CVD process.