[J-1-3] Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?

K. Ohmori、P. Ahmet、K. Shiraishi、K. Yamabe、H. Watanabe、Y. Akasaka、N. Umezawa、K. Nakajima、M. Yoshitake、T. Nakayama、K.-S. Chang、K. Kakushima、Y. Nara、M.L. Green、H. Iwai、K. Yamada、T. Chikyow (1.Advanced Electronic Materials Center, National Institute for Materials Science、2.Tokyo Institute of Technology、3.University of Tsukuba、4.Osaka University、5.Selete、6.Chiba University、7.National Institute of Standards and Technology、8.Waseda University、9.Tokyo Electron)

https://doi.org/10.7567/SSDM.2006.J-1-3