[J-1-3] Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K.-S. Chang, K. Kakushima, Y. Nara, M.L. Green, H. Iwai, K. Yamada, T. Chikyow (1.Advanced Electronic Materials Center, National Institute for Materials Science, 2.Tokyo Institute of Technology, 3.University of Tsukuba, 4.Osaka University, 5.Selete, 6.Chiba University, 7.National Institute of Standards and Technology, 8.Waseda University, 9.Tokyo Electron)

https://doi.org/10.7567/SSDM.2006.J-1-3