[J-2-5] Si-Capped Annealing of HfO2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion

Masashi Takahashi、Hideki Satake、Masaru Kadoshima、Arito Ogawa、Kunihiko Iwamoto、Hiroyuki Ota、Toshihide Nabatame、Akira Toriumi (1.MIRAI-ASET, AIST Tsukuba West 7、2.MIRAI-ASRC, AIST Tsukuba West 7、3.Department of Materials Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2006.J-2-5