[J-2-5] Si-Capped Annealing of HfO2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion

Masashi Takahashi, Hideki Satake, Masaru Kadoshima, Arito Ogawa, Kunihiko Iwamoto, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi (1.MIRAI-ASET, AIST Tsukuba West 7, 2.MIRAI-ASRC, AIST Tsukuba West 7, 3.Department of Materials Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2006.J-2-5