[J-3-4] Electric characteristics of Si3N4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces.

Masaaki Higuchi、Takashi Aratani、Tatsufumi Hamada、Akinobu Teramoto、Takeo Hattori、Shigetoshi Sugawa、Tadahiro Ohmi、Seiji Shinagawa、Hiroshi Nohira、Eiji Ikenaga、Keisuke Kobayashi (1.Graduate School of Engineering, Tohoku University、2.The New Industry Creation Hatchery Center (NICHe), Tohoku University、3.Musashi Institute of Technology、4.JASRI/SPring8)

https://doi.org/10.7567/SSDM.2006.J-3-4