Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics

Kenji OKADA; Hiroyuki OTA; Tsuyoshi HORIKAWA; Masaru KADOSHIMA; Arito OGAWA; Toshihide NABATAME; Akira TORIUMI

doi:https://doi.org/10.7567/SSDM.2006.J-9-4

2006 International Conference on Solid State Devices and Materials

Sep 12, 2006 - Sep 15, 2006
PACIFICO Yokohama, Yokohama, Japan

[J-9-4] Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics

Kenji OKADA, Hiroyuki OTA, Tsuyoshi HORIKAWA, Masaru KADOSHIMA, Arito OGAWA, Toshihide NABATAME, Akira TORIUMI (1.MIRAI-ASET, AIST, 2.MIRAI-ASRC-AIST, 3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2006.J-9-4

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