Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique: Not vs. Oxide Processing

Younghwan Son; Chang-Ki Baek; Bomsoo Kim; In-Shik Han; Tae-Gyu Goo; Hi-Deok Leeand; Dae M. Kim

doi:https://doi.org/10.7567/SSDM.2006.P-1-11

[P-1-11] Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique: Not vs. Oxide Processing

Younghwan Son、Chang-Ki Baek、Bomsoo Kim、In-Shik Han、Tae-Gyu Goo、Hi-Deok Leeand、Dae M. Kim (1.Department of Electronics Engineering, Chungnam National University、2.Korea Institute for Advanced Study)

https://doi.org/10.7567/SSDM.2006.P-1-11

2006 International Conference on Solid State Devices and Materials

[P-1-11] Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique: Not vs. Oxide Processing