Stress-Relaxation Process during Post-Annealing in SGOI Formed by H+ Irradiation and Oxidation-Induced Ge Condensation

Masanori Tanaka; Taizoh Sadoh; Koji Matsumoto; Toyotsugu Enokida; Masanobu Miyao

doi:https://doi.org/10.7567/SSDM.2006.P-1-22

[P-1-22] Stress-Relaxation Process during Post-Annealing in SGOI Formed by H+ Irradiation and Oxidation-Induced Ge Condensation

Masanori Tanaka、Taizoh Sadoh、Koji Matsumoto、Toyotsugu Enokida、Masanobu Miyao (1.Department of Electronics, Kyushu University、2.SUMCO、3.Analyses & Evaluation Center, Fukuryo Semicon Engineering Corporation)

https://doi.org/10.7567/SSDM.2006.P-1-22

2006 International Conference on Solid State Devices and Materials

[P-1-22] Stress-Relaxation Process during Post-Annealing in SGOI Formed by H+ Irradiation and Oxidation-Induced Ge Condensation