Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation

Toru Ikoma; Chihiro Taguchi; Seiichi Fukuda; Kazuhiko Endo; Heiji Watanabe; Seiji Samukawa

doi:https://doi.org/10.7567/SSDM.2006.P-1-24

[P-1-24] Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation

Toru Ikoma, Chihiro Taguchi, Seiichi Fukuda, Kazuhiko Endo, Heiji Watanabe, Seiji Samukawa (1.Institute of Fluid Science, Tohoku University, 2.National Institute of Advanced Industrial Science and Technology, 3.Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2006.P-1-24

2006 International Conference on Solid State Devices and Materials

[P-1-24] Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation