Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation

Toru Ikoma; Chihiro Taguchi; Seiichi Fukuda; Kazuhiko Endo; Heiji Watanabe; Seiji Samukawa

doi:https://doi.org/10.7567/SSDM.2006.P-1-24

[P-1-24] Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation

Toru Ikoma、Chihiro Taguchi、Seiichi Fukuda、Kazuhiko Endo、Heiji Watanabe、Seiji Samukawa (1.Institute of Fluid Science, Tohoku University、2.National Institute of Advanced Industrial Science and Technology、3.Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2006.P-1-24

2006 International Conference on Solid State Devices and Materials

[P-1-24] Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation