The Japan Society of Applied Physics

[P-1-26] Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate

T. Fukunaga、K. Hosawa、T. Hosoi、K. Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2006.P-1-26