Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate

T. Fukunaga; K. Hosawa; T. Hosoi; K. Shibahara

doi:https://doi.org/10.7567/SSDM.2006.P-1-26

[P-1-26] Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate

T. Fukunaga、K. Hosawa、T. Hosoi、K. Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2006.P-1-26

2006 International Conference on Solid State Devices and Materials

[P-1-26] Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate