[P-1-3] Interface Layer Control at Y2O3/Ge by N2 and O2 Annealing on Ge(100) and Ge(111) Surfaces

H. Nomura, K. Kita, T. Nishimura, A. Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2006.P-1-3