[P-1-30L] Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON

N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara, K. Yamada (1.Advanced Electronic Materials Center, National Institute for Materials Science, 2.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 3.Graduate School of Advanced Sciences of Matter, Hiroshima Univ., 4.Semiconductor Leading Edge Technology Inc., 5.Leading edge Process Development Center, Tokyo Electron LTD., 6.Computational Materials Science Center, National Institute for Materials Science, 7.Nanotechnology Research Laboratories, Waseda University)

https://doi.org/10.7567/SSDM.2006.P-1-30L