[P-1-5] Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
Takeo Matsuki, Seiji Inumiya, Nobuyuki Mise, Takahisa Eimori, Yasuo Nara
(1.Research Department 1, Semiconductor Leading Edge Technologies, Inc.)
https://doi.org/10.7567/SSDM.2006.P-1-5