[P-1-5] Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation

Takeo Matsuki、Seiji Inumiya、Nobuyuki Mise、Takahisa Eimori、Yasuo Nara (1.Research Department 1, Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2006.P-1-5