Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope

Noritaka Ajari; Junichi Uchikoshi; Takaaki Hirokane; Kennta Arima; Mizuho Morita

doi:https://doi.org/10.7567/SSDM.2006.P-2-13

[P-2-13] Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope

Noritaka Ajari、Junichi Uchikoshi、Takaaki Hirokane、Kennta Arima、Mizuho Morita (1.Department of Precision Science and Technology, Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2006.P-2-13

2006 International Conference on Solid State Devices and Materials

[P-2-13] Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope