The Japan Society of Applied Physics

[P-3-7] A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme

In-Hwan Ji、Young-Hwan Choi、Byung-Chul Jeon、Seung-Chul Lee、Soo-Seong Kim、Kwang-Hoon Oh、Chong-Man Yun、Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University)

https://doi.org/10.7567/SSDM.2006.P-3-7