Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device

Ichirou Takahashi; Tatsunori Isogai; Keita Azumi; Masaki Hirayama; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2006.P-4-1

[P-4-1] Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device

Ichirou Takahashi、Tatsunori Isogai、Keita Azumi、Masaki Hirayama、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2006.P-4-1

2006 International Conference on Solid State Devices and Materials

[P-4-1] Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device