[P-4-1] Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
Ichirou Takahashi, Tatsunori Isogai, Keita Azumi, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
(1.Graduate School of Engineering, Tohoku University)
https://doi.org/10.7567/SSDM.2006.P-4-1
