[P-6-11L] Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs

Toshihide Ide, Mitsuaki Shimizu, Shuichi Yagi, Masaki Inada, Guanxi Piao, Yoshiki Yano, Nakao Akutsu, Hajime Okumura, Kazuo Arai (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 2.Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation)

https://doi.org/10.7567/SSDM.2006.P-6-11L