[P-6-11L] Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs

Toshihide Ide、Mitsuaki Shimizu、Shuichi Yagi、Masaki Inada、Guanxi Piao、Yoshiki Yano、Nakao Akutsu、Hajime Okumura、Kazuo Arai (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center、2.Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation)

https://doi.org/10.7567/SSDM.2006.P-6-11L