[P-6-7] Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In0.3Ga0.7As0.99N0.01(Sb) Dilute Channel

Ke-Hua Su, Wei-Chou Hsu, Ching-Sung Lee, Yu-Shyan Lin, Po-Jung Hu, Ru-Shang Hsiao, Tung-Wei Chi, Jim-Y Chi (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Department of Electronic Engineering, Feng Chia University, 3.Department of Materials Science and Engineering, National Dong Hwa University, 4.Institute of Electro-Optical Engineering, National Chiao-Tung University, 5.Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2006.P-6-7