[P-6-7] Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In0.3Ga0.7As0.99N0.01(Sb) Dilute Channel

Ke-Hua Su、Wei-Chou Hsu、Ching-Sung Lee、Yu-Shyan Lin、Po-Jung Hu、Ru-Shang Hsiao、Tung-Wei Chi、Jim-Y Chi (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University、2.Department of Electronic Engineering, Feng Chia University、3.Department of Materials Science and Engineering, National Dong Hwa University、4.Institute of Electro-Optical Engineering, National Chiao-Tung University、5.Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2006.P-6-7