Mechanism investigation of chlorine-treated InGaN/GaN light-emitting diodes

Po-Sung Chen; Ching-Ting Lee

doi:https://doi.org/10.7567/SSDM.2006.P-7-20

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[P-7-20] Mechanism investigation of chlorine-treated InGaN/GaN light-emitting diodes

Po-Sung Chen、Ching-Ting Lee (1.Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology center, National Cheng Kung University)

https://doi.org/10.7567/SSDM.2006.P-7-20

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