The Japan Society of Applied Physics

[P-7-9] Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure

Y. K. Su、W. C. Chen、R. W. Chuang、S. H. Hsu、B. Y. Chen (1.Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

https://doi.org/10.7567/SSDM.2006.P-7-9