nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2

C. Y. Kang; P. Kirsch; D. Heh; C. Young; P. Sivasubramani; G Bersuker; S.C. Song; R. Choi; B. H. Lee; J. Lichtenwalner; J. S. Jur; A. I. Kingon; R. Jammy

doi:https://doi.org/10.7567/SSDM.2007.A-3-4

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-4] nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2

C. Y. Kang、P. Kirsch、D. Heh、C. Young、P. Sivasubramani、G Bersuker、S.C. Song、R. Choi、B. H. Lee、J. Lichtenwalner、J. S. Jur、A. I. Kingon、R. Jammy (1.IBM Assignee、2.Dept. of Materials Science and Engineering, North Carolina State University)

https://doi.org/10.7567/SSDM.2007.A-3-4

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