[A-3-4] nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2

C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G Bersuker, S.C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy (1.IBM Assignee, 2.Dept. of Materials Science and Engineering, North Carolina State University)

https://doi.org/10.7567/SSDM.2007.A-3-4