[A-5-1] Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling

T. Noda、W. Vandervorst、S. Felch、V. Parihar、C. Vrancken、S. Severi、T. Y. Hoffmann、A. Falpin、B. van Daele、T. Jannssens、H. Bender、P. Eyben、M. Niwa、R. Schreutelkamp、F. Nouri、P. P. Absil、M. Jurczak、K. De Meyer、S. Biesemans (1.Matsushita Electric Industrial Co., Ltd.、2.IMEC、3.Applied Materials)

https://doi.org/10.7567/SSDM.2007.A-5-1