Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs

Nobuyuki Ikarashi; Makiko Oshida; Makoto Miyamura; Motofumi Saitoh; Akira Mineji; Seiichi Shishiguchi

doi:https://doi.org/10.7567/SSDM.2007.A-5-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-5-2] Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs

Nobuyuki Ikarashi、Makiko Oshida、Makoto Miyamura、Motofumi Saitoh、Akira Mineji、Seiichi Shishiguchi (1.NEC Corporation, Device Platforms Research Laboratories、2.NEC Electronics Corporation, Process Technology Division)

https://doi.org/10.7567/SSDM.2007.A-5-2

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