[A-8-2] Tinv Scaling and Jg Reducing for nMOSFET with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process

I. Oshiyama, K. Tai, T. Hirano, S. Yamaguchi, K. Tanaka, Y. Hagimoto, T. Uemura, T. Ando, K. Watanabe, R. Yamamoto, S. Kanda, J. Wang, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, M. Oshima, S. Toyoda, N. Nagashima, S. Kadomura (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 2.Graduate School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.2007.A-8-2