[A-9-4] Phase and Composition Control of Ni-FUSI gates by N2 I/I with Double Ni-silicidation

K. Yamamoto、S. Sakashita、Y. Sato、M. Inoue、M. Anma、T. Oosuka、J. Yugami (1.Matsushita Electric Industrial Co., Ltd.、2.RENESAS technology Corp.)

https://doi.org/10.7567/SSDM.2007.A-9-4