[A-9-4] Phase and Composition Control of Ni-FUSI gates by N2 I/I with Double Ni-silicidation

K. Yamamoto, S. Sakashita, Y. Sato, M. Inoue, M. Anma, T. Oosuka, J. Yugami (1.Matsushita Electric Industrial Co., Ltd., 2.RENESAS technology Corp.)

https://doi.org/10.7567/SSDM.2007.A-9-4