[B-1-4] Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO2/Ge Gate Stack

Rui Li、S. J. Lee、D. Z. Chi、M. H. Hong、D. -L. Kwong (1.Silicon Nano Device Lab, Department of ECE, National University of Singapore、2.Institute of Materials Research and Engineering、3.Laser Microprocessing Lab, Department of Electrical and Computer Engineering, National University of Singapore、4.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2007.B-1-4