[B-2-4] Schottky Barrier MOSFETs as Resonant Tunneling Devices

Shuichi Toriyama, Nobuyuki Sano (1.Advanced LSI Technology Laboratory, Toshiba Corporation, 2.Institute of Applied Physics, University of Tsukuba)

https://doi.org/10.7567/SSDM.2007.B-2-4