Multiband Simulation of Uniaxially Stressed Silicon MOSFETs Based on Non-Equilibrium Green’s Function Method

H. Fitriawan; S. Souma; M. Ogawa

doi:https://doi.org/10.7567/SSDM.2007.B-2-6

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-2-6] Multiband Simulation of Uniaxially Stressed Silicon MOSFETs Based on Non-Equilibrium Green’s Function Method

H. Fitriawan, S. Souma, M. Ogawa (1.Graduate School of Science and Technology, Kobe University, 2.Department of Electrical and Electronics Engineering, Kobe University)

https://doi.org/10.7567/SSDM.2007.B-2-6

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