Multiband Simulation of Uniaxially Stressed Silicon MOSFETs Based on Non-Equilibrium Green’s Function Method

H. Fitriawan; S. Souma; M. Ogawa

doi:https://doi.org/10.7567/SSDM.2007.B-2-6

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-2-6] Multiband Simulation of Uniaxially Stressed Silicon MOSFETs Based on Non-Equilibrium Green’s Function Method

H. Fitriawan、S. Souma、M. Ogawa (1.Graduate School of Science and Technology, Kobe University、2.Department of Electrical and Electronics Engineering, Kobe University)

https://doi.org/10.7567/SSDM.2007.B-2-6

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