[B-3-2] High Performance and Low Leakage CMOS for 45nm Low Power Technology and Beyond

J.-P. Han, Y. M. Lee, H. Utomo, R. Lindsay, M. Eller, J.C. Kim, V. Sardesai, V. Chan, S. Fang, J. Holt, T.N. Adam, H. Zhuang, W. Wille, Z. Lun, H. Wang, T. Dyer, J. Yan, O.J. Kwon, O.S. Kwon, C.W. Lai, T.J. Tang, S.S. Tan, J. Yuan, J. Li, H. Ng, H. Shang, J. Sudijono, D. Schepis, M. Ieong, Y. Li, J.H. Ku, A. Gutmann, M. Hierlemann (1.Infineon Technologies AG, 2.Chartered Semiconductor Manufacturing Limited, 3.IBM Semiconductor Research and Technology Group, 4.Samsung Elec. Co. Alliances at IBM Semiconductor Research and Development Center (SRDC))

https://doi.org/10.7567/SSDM.2007.B-3-2