[B-3-2] High Performance and Low Leakage CMOS for 45nm Low Power Technology and Beyond

J.-P. Han、Y. M. Lee、H. Utomo、R. Lindsay、M. Eller、J.C. Kim、V. Sardesai、V. Chan、S. Fang、J. Holt、T.N. Adam、H. Zhuang、W. Wille、Z. Lun、H. Wang、T. Dyer、J. Yan、O.J. Kwon、O.S. Kwon、C.W. Lai、T.J. Tang、S.S. Tan、J. Yuan、J. Li、H. Ng、H. Shang、J. Sudijono、D. Schepis、M. Ieong、Y. Li、J.H. Ku、A. Gutmann、M. Hierlemann (1.Infineon Technologies AG、2.Chartered Semiconductor Manufacturing Limited、3.IBM Semiconductor Research and Technology Group、4.Samsung Elec. Co. Alliances at IBM Semiconductor Research and Development Center (SRDC))

https://doi.org/10.7567/SSDM.2007.B-3-2