[B-5-1] Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs

Shigeki Kobayashi、Masumi Saitoh、Yukio Nakabayashi、Ken Uchida (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2007.B-5-1