Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

T. Mizuno; T. Irisawa; N. Hirashita; Y. Moriyama; T. Tezuka; N. Sugiyama; S. Takagi

doi:https://doi.org/10.7567/SSDM.2007.B-5-2

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-5-2] Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

T. Mizuno, T. Irisawa, N. Hirashita, Y. Moriyama, T. Tezuka, N. Sugiyama, S. Takagi (1.MIRAI-AIST, 2.MIRAI-ASET, 3.Kanagawa University, 4.The University of Tokyo)

https://doi.org/10.7567/SSDM.2007.B-5-2

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