Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

T. Mizuno; T. Irisawa; N. Hirashita; Y. Moriyama; T. Tezuka; N. Sugiyama; S. Takagi

doi:https://doi.org/10.7567/SSDM.2007.B-5-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-5-2] Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain

T. Mizuno、T. Irisawa、N. Hirashita、Y. Moriyama、T. Tezuka、N. Sugiyama、S. Takagi (1.MIRAI-AIST、2.MIRAI-ASET、3.Kanagawa University、4.The University of Tokyo)

https://doi.org/10.7567/SSDM.2007.B-5-2

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