Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction

Akio Toda; Hidetatsu Nakamura; Toshinori Fukai; Nobuyuki Ikarashi

doi:https://doi.org/10.7567/SSDM.2007.C-10-3

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-10-3] Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction

Akio Toda, Hidetatsu Nakamura, Toshinori Fukai, Nobuyuki Ikarashi (1.Device Platforms Research Laboratories, NEC Corporation, 2.Advanced Device Development Division, NEC Electronics)

https://doi.org/10.7567/SSDM.2007.C-10-3

▲