Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction

Akio Toda; Hidetatsu Nakamura; Toshinori Fukai; Nobuyuki Ikarashi

doi:https://doi.org/10.7567/SSDM.2007.C-10-3

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-10-3] Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction

Akio Toda、Hidetatsu Nakamura、Toshinori Fukai、Nobuyuki Ikarashi (1.Device Platforms Research Laboratories, NEC Corporation、2.Advanced Device Development Division, NEC Electronics)

https://doi.org/10.7567/SSDM.2007.C-10-3

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