Atomically Controlled Hetero-Epitaxy of DO3-type Fe3Si on Ge(111) Substrate

Koji Ueda; Yuichiro Ando; Mamoru Kumano; Taizoh Sadoh; Kazumasa Narumi; Yoshihito Maeda; Masanobu Miyao

doi:https://doi.org/10.7567/SSDM.2007.C-2-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-2-1] Atomically Controlled Hetero-Epitaxy of DO3-type Fe3Si on Ge(111) Substrate

Koji Ueda、Yuichiro Ando、Mamoru Kumano、Taizoh Sadoh、Kazumasa Narumi、Yoshihito Maeda、Masanobu Miyao (1.Department of Electronics, Kyushu University、2.Japan Atomic Energy Agency、3.Department of Energy Science and Technology, Kyoto University)

https://doi.org/10.7567/SSDM.2007.C-2-1

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