Atomically Controlled Hetero-Epitaxy of DO3-type Fe3Si on Ge(111) Substrate

Koji Ueda; Yuichiro Ando; Mamoru Kumano; Taizoh Sadoh; Kazumasa Narumi; Yoshihito Maeda; Masanobu Miyao

doi:https://doi.org/10.7567/SSDM.2007.C-2-1

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-2-1] Atomically Controlled Hetero-Epitaxy of DO3-type Fe3Si on Ge(111) Substrate

Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao (1.Department of Electronics, Kyushu University, 2.Japan Atomic Energy Agency, 3.Department of Energy Science and Technology, Kyoto University)

https://doi.org/10.7567/SSDM.2007.C-2-1

▲