[C-2-6L] Magneto-transport properties of In0.56Ga0.44As gated-vertical quantum dot based on a metal-insulator-semiconductor structure

T. Kita、D. Chiba、Y. Ohno、H. Ohno (1.Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency、2.Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.2007.C-2-6L