Electrical modulation of Curie temperature of (Ga,Mn)As channel in field-effect transistors: Mn composition dependence

Y. Nishitani; D. Chiba; F .Matsukura; H. Ohno

doi:https://doi.org/10.7567/SSDM.2007.C-2-7L

[C-2-7L] Electrical modulation of Curie temperature of (Ga,Mn)As channel in field-effect transistors: Mn composition dependence

Y. Nishitani, D. Chiba, F .Matsukura, H. Ohno (1.Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication, Tohoku University, 2.Semiconductor Spintronics Project Exploratory Research for Advanced Technology Japan Science and Technology Agency)

https://doi.org/10.7567/SSDM.2007.C-2-7L

2007 International Conference on Solid State Devices and Materials

[C-2-7L] Electrical modulation of Curie temperature of (Ga,Mn)As channel in field-effect transistors: Mn composition dependence